IPS65R1K0CEAKMA2

Obsolete

Infineon Technologies

MOSFET N-CH 650V 7.2A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 7.2A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS65R1K0CEAKMA2

Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds	328 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	PG-TO251-3-342
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type
Infineon Technologies IPS65R1K0CEAKMA2	328 pF	3.5 V	Through Hole	20 V	15.3 nC	-55 °C	150 °C	TO-251-3 Stub Leads IPAK	68 W	650 V	10 V	MOSFET (Metal Oxide)	1 Ohm	PG-TO251-3-342	7.2 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 7.2A (Tc) 68W (Tc) Through Hole PG-TO251-3-342

Technical documentation and resources