IXTT440N055T2

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IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 55V; 440A; 1000W; TO268; 76NS

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Active

IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 55V; 440A; 1000W; TO268; 76NS

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT440N055T2

Current - Continuous Drain (Id) @ 25°C	440 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	405 nC
Input Capacitance (Ciss) (Max) @ Vds	25000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	1000 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
IXYS IXTT440N055T2	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	440 A	-55 °C	175 ░C	20 V	1000 W	MOSFET (Metal Oxide)	25000 pF	TO-268AA	N-Channel	Surface Mount	405 nC	4 V	1.8 mOhm	55 V	10 V
IXYS IXTT440N04T4HV	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	440 A	-55 °C	175 ░C	15 V		MOSFET (Metal Oxide)	26000 pF	TO-268HV (IXTT)	N-Channel	Surface Mount		4 V	1.25 mOhm	40 V	10 V	480 nC	940 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 440A (Tc) 1000W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available