IXFP8N85X

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IXYS

MOSFET N-CH 850V 8A TO220AB

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IXYS

MOSFET N-CH 850V 8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP8N85X

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	850 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	654 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-220AB (IXFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Package / Case
IXYS IXFP8N85X	850 mOhm	Through Hole	200 W	8 A	17 nC	-55 °C	150 °C	N-Channel	5.5 V	10 V	TO-220AB (IXFP)	654 pF	30 V	MOSFET (Metal Oxide)	850 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 850 V 8A (Tc) 200W (Tc) Through Hole TO-220AB (IXFP)

Technical documentation and resources

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