APTML1002U60R020T3AG

Obsolete

Microsemi Corporation

MOSFET 2N-CH 1000V 20A SP3

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

MOSFET 2N-CH 1000V 20A SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTML1002U60R020T3AG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	1 kV
Drain to Source Voltage (Vdss)	1000 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	520 W
Rds On (Max) @ Id, Vgs [Max]	720 mOhm
Supplier Device Package	SP3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
Microsemi Corporation APTML1002U60R020T3AG	1 kV	1000 V	4 V	20 A	150 °C	-40 °C	SP3	Chassis Mount	SP3	720 mOhm	MOSFET (Metal Oxide)	2 N-Channel (Dual)	520 W	6000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1000V (1kV) 20A 520W Chassis Mount SP3

Technical documentation and resources

No documents available