ZXM62P03E6TA
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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ZXM62P03E6TA
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXM62P03E6TA |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-6 |
| Power Dissipation (Max) [Max] | 625 mW |
| Rds On (Max) @ Id, Vgs | 150 mOhm |
| Supplier Device Package | SOT-26 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.73 | |
| 10 | $ 0.64 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.37 | |||
| 1000 | $ 0.31 | |||
| Digi-Reel® | 1 | $ 0.73 | ||
| 10 | $ 0.64 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.37 | |||
| 1000 | $ 0.31 | |||
| Tape & Reel (TR) | 3000 | $ 0.29 | ||
| 6000 | $ 0.27 | |||
| 9000 | $ 0.25 | |||
| 15000 | $ 0.25 | |||
Description
General part information
ZXM62P03E6 Series
This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Documents
Technical documentation and resources