Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC2H065BY-TR |
|---|---|
| Current - Average Rectified (Io) | 2 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | DPAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V |
STPSC2H065-Y Series
650 V, 2 A High Surge Silicon Carbide Power Schottky Diode
| Part | Reverse Recovery Time (trr) | Speed | Current - Reverse Leakage @ Vr | Package / Case | Grade | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Current - Average Rectified (Io) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Qualification | Supplier Device Package | Speed | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 0 ns | No Recovery Time | 20 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Automotive | 650 V | 1.55 V | Surface Mount | 2 A | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | AEC-Q101 | DPAK | ||
STMicroelectronics | 12 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.2 kV | 1.5 V | Surface Mount | 5 A | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | DPAK | 200 mA 500 ns | 190 pF | ||||
STMicroelectronics | No Recovery Time | 20 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 650 V | 1.55 V | Surface Mount | 2 A | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | DPAK |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.60 | |
| 5000 | $ 0.57 | |||
| 12500 | $ 0.54 | |||
Description
General part information
STPSC2H065-Y Series
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible performance of their controlled switches in all conditions. This rectifier will enhance the performance of the targeted application.
Its improved creepage distance ensures the compatibility with industrial and automotive creepage standards.
Documents
Technical documentation and resources