TPAR3J S1G

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 600V 3A TO277A

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 600V 3A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	TPAR3J S1G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	3-PowerDFN, TO-277
Reverse Recovery Time (trr)	120 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation TPAR3D	Avalanche	200 V	1.55 V	Surface Mount	200 mA 500 ns	175 ░C	-55 C	TO-277A (SMPC)	120 ns	3-PowerDFN TO-277	10 µA	3 A
Taiwan Semiconductor Corporation TPAR3G S1G	Avalanche	400 V	1.55 V	Surface Mount	200 mA 500 ns	175 ░C	-55 C	TO-277A (SMPC)	120 ns	3-PowerDFN TO-277	10 µA	3 A
Taiwan Semiconductor Corporation TPAR3J S1G	Avalanche	600 V	1.55 V	Surface Mount	200 mA 500 ns	175 ░C	-55 C	TO-277A (SMPC)	120 ns	3-PowerDFN TO-277	10 µA	3 A

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General part information

Diode 600 V 3A Surface Mount TO-277A (SMPC)

Technical documentation and resources

No documents available