IXFK48N60Q3

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IXYS

MOSFET N-CH 600V 48A TO264AA

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IXYS

MOSFET N-CH 600V 48A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK48N60Q3

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	7020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1000 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]
IXYS IXFK48N60Q3	Through Hole	6.5 V	10 V	TO-264-3 TO-264AA	-55 °C	150 °C	30 V	7020 pF	600 V	140 mOhm	1000 W	48 A	MOSFET (Metal Oxide)	N-Channel	TO-264AA (IXFK)	140 nC
IXYS IXFK48N50Q	Through Hole		10 V	TO-264-3 TO-264AA	-55 °C	150 °C	20 V	7000 pF	500 V	100 mOhm		48 A	MOSFET (Metal Oxide)	N-Channel	TO-264AA (IXFK)	190 nC	500 W	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 17.87

General part information

N-Channel 600 V 48A (Tc) 1000W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available