RN2112MFV,L3F
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/INFINITY, SOT-723(VESM)
RN2112MFV,L3F
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/INFINITY, SOT-723(VESM)
Description
General part information
RN2112MFV Series
Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/Infinity, SOT-723(VESM)
Technical Specifications
Parameters and characteristics for this part
| Specification | RN2112MFV,L3F |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 120 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Package Name | VESM |
| Power - Max | 150 mW |
| Resistor - Base (R1) Resistance | 22 kOhm |
| Transistor Type | Pre-Biased, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
RN2112MFV Data sheet/English
Surface Mount Small Signal Transistor (BJT) Precautions for use
Selection Guide Small Signal 2025 Rev1.0
Electrical Characteristics of Bias Resistor Built-In Transistors (BRTs)
RN2112MFV Data sheet/Japanese
Basics of Bias Resistor Built-in Transistors (BRT)
Mini catalog Introduction to Toshiba Bias Resistor Built-in Transistors (Digital Transistors)