IRF6618TRPBF

Obsolete

Infineon Technologies

TRANS MOSFET N-CH SI 30V 30A 7-PIN DIRECT-FET MT T/R

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH SI 30V 30A 7-PIN DIRECT-FET MT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6618TRPBF

Current - Continuous Drain (Id) @ 25°C	170 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC
Input Capacitance (Ciss) (Max) @ Vds	5640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MT
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	DIRECTFET™ MT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF6618TRPBF	2.2 mOhm	Surface Mount	DirectFET™ Isometric MT	30 V	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	2.8 W 89 W	20 V	30 A 170 A	2.35 V	DIRECTFET™ MT	150 °C	-40 °C	65 nC	5640 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 30A (Ta), 170A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Technical documentation and resources