Technical Specifications
Parameters and characteristics for this part
| Specification | STU7NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 900 mOhm |
| Supplier Device Package | TO-251 (IPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.11 | |
| 75 | $ 1.69 | |||
| 150 | $ 1.39 | |||
| 525 | $ 1.18 | |||
| 1050 | $ 1.00 | |||
| 2025 | $ 0.95 | |||
| 5025 | $ 0.92 | |||
| 10050 | $ 0.88 | |||
Description
General part information
STU7NM60N Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources
AN2344
Application NotesTN1225
Technical Notes & ArticlesFlyers (5 of 7)
DS6523
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AN4250
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UM1575
User ManualsTN1378
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Flyers (5 of 7)
AN2842
Application NotesFlyers (5 of 7)
Flyers (5 of 7)