BYC20DX-600PQ

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WeEn Semiconductors

DIODE GEN PURP 600V 20A TO220F

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WeEn Semiconductors

DIODE GEN PURP 600V 20A TO220F

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General part information

Diode 600 V 20A Through Hole TO-220F

Technical documentation and resources

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Parameters and characteristics commom to parts in this series

Specification	BYC20DX-600PQ	BYC20 Series

Current - Reverse Leakage @ Vr	10 µA	10 - 200 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	-	150 °C
Operating Temperature - Junction [Max]	175 °C	175 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab	TO-220-2, TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	20 ns	20 - 55 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	TO-220F	TO-220AC, TO-220FP, TO-220F
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	500 - 600 V
Voltage - Forward (Vf) (Max) @ If	2.9 V	2.5 - 2.9 V

DIODE GEN PURP 500V 20A TO220AC

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]
WeEn Semiconductors BYC20-600,127	500 V	TO-220AC	TO-220-2	Through Hole	200 µA	200 mA, 500 ns	2.9 V	Standard	150 °C	55 ns
WeEn Semiconductors BYC20D-600PQ	600 V	TO-220AC	TO-220-2	Through Hole	10 µA	200 mA, 500 ns	2.9 V	Standard		20 ns	175 °C
WeEn Semiconductors BYC20X-600,127	500 V	TO-220FP	TO-220-2 Full Pack, Isolated Tab	Through Hole	200 µA	200 mA, 500 ns	2.9 V	Standard	150 °C	55 ns
WeEn Semiconductors BYC20DX-600PQ	600 V	TO-220F	TO-220-2 Full Pack, Isolated Tab	Through Hole	10 µA	200 mA, 500 ns	2.9 V	Standard		20 ns	175 °C
WeEn Semiconductors BYC20X-600PQ	600 V	TO-220FP	TO-220-2 Full Pack, Isolated Tab	Through Hole	10 µA	200 mA, 500 ns	2.5 V	Standard		35 ns	175 °C