IKQ150N65EH7XKSA1
ActiveHARD-SWITCHING 650 V, 150 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247PLUS-3 PACKAGE TECHNOLOGY
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IKQ150N65EH7XKSA1
ActiveHARD-SWITCHING 650 V, 150 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247PLUS-3 PACKAGE TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | IKQ150N65EH7XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 160 A |
| Current - Collector Pulsed (Icm) | 600 A |
| Gate Charge | 301 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 621 W |
| Reverse Recovery Time (trr) | 84 ns |
| Supplier Device Package | PG-TO247-3-46 |
| Switching Energy | 5.8 mJ, 5.4 mJ |
| Td (on/off) @ 25°C | 45 ns, 341 ns |
| Test Condition | 10 Ohm, 150 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.65 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKQ150 Series
Hard-switching 650 V, 150 ATRENCHSTOP™ IGBT7H7discretein TO247PLUS-3 package has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.
Documents
Technical documentation and resources