MJD2873Q-13

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Technical Specifications

Parameters and characteristics for this part

Specification	MJD2873Q-13

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Frequency - Transition	65 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.45 W
Qualification	AEC-Q101
Supplier Device Package	TO-252 (DPAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NPN, 50V, 2A, TO252

Part	Power - Max [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Qualification	Frequency - Transition	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case
Diodes Inc MJD2873Q-13	1.45 W	NPN	50 V	Automotive	120 hFE	-55 °C	150 °C	100 nA	AEC-Q101	65 MHz	TO-252 (DPAK)	Surface Mount	2 A	300 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 50V, 2A, TO252

Technical documentation and resources