Specification	APT58M50JU3

Current - Continuous Drain (Id) (Tc)	58 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	340 nC
Input Capacitance (Ciss) (Max)	10800 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	543 W
Rds On (Max)	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

APT58M50 Series

500V/Boost Chopper/Si MOSFET Modules

Part	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Gate Charge (Max)	Package / Case	Vgs(th) (Max)	FET Type	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Technology
Microchip Technology APT58M50JCU2	58 A	-40 °C	150 °C	SOT-227	340 nC	miniBLOC SOT-227-4	5 V	N-Channel	Chassis Mount	30 V	10 V	65 mOhm	543 W	500 V	10800 pF	MOSFET (Metal Oxide)
Microchip Technology APT58M50JU2	58 A	-40 °C	150 °C	SOT-227	340 nC	miniBLOC SOT-227-4	5 V	N-Channel	Chassis Mount	30 V	10 V	65 mOhm	543 W	500 V	10800 pF	MOSFET (Metal Oxide)
Microchip Technology APT58M50JU3	58 A	-40 °C	150 °C	SOT-227	340 nC	miniBLOC SOT-227-4	5 V	N-Channel	Chassis Mount	30 V	10 V	65 mOhm	543 W	500 V	10800 pF	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources