
SPB17N80C3ATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 800 V, 17 A, 0.25 OHM, TO-263 (D2PAK), SURFACE MOUNT
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SPB17N80C3ATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 800 V, 17 A, 0.25 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | SPB17N80C3ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 177 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 227 W |
| Rds On (Max) @ Id, Vgs | 290 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SPB17N80 Series
The SPB17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.
Documents
Technical documentation and resources