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SPB17N80C3ATMA1 - PG-TO263-3-2

SPB17N80C3ATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 800 V, 17 A, 0.25 OHM, TO-263 (D2PAK), SURFACE MOUNT

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SPB17N80C3ATMA1 - PG-TO263-3-2

SPB17N80C3ATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 800 V, 17 A, 0.25 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSPB17N80C3ATMA1
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]177 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]227 W
Rds On (Max) @ Id, Vgs290 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.51
10$ 3.33
100$ 2.40
500$ 2.28
Digi-Reel® 1$ 4.51
10$ 3.33
100$ 2.40
500$ 2.28
Tape & Reel (TR) 1000$ 2.09
NewarkEach (Supplied on Cut Tape) 1$ 4.69
10$ 3.55
25$ 3.53
50$ 3.05
100$ 2.57
250$ 2.35

Description

General part information

SPB17N80 Series

The SPB17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.

Documents

Technical documentation and resources