MJD44H11Q-13

Active

Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Search across all available documentation for this part.

Active

Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Technical Specifications

Parameters and characteristics for this part

Specification	MJD44H11Q-13

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.5 W
Qualification	AEC-Q101
Supplier Device Package	TO-252 (DPAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN, 80V, 8A, TO252

Part	Mounting Type	Transistor Type	Supplier Device Package	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Grade
Diodes Inc MJD44H11Q-13	Surface Mount	NPN	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 MHz	80 V	8 A	1 µA	1.5 W	60	1 V	-55 °C	150 °C	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 80V, 8A, TO252

Technical documentation and resources