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STN6N60M2 - ONSEMI BAS40LT1G

STN6N60M2

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STMicroelectronics

N-CHANNEL 600 V, 1.00 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN A SOT223-2 PACKAGE

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENProduct Change Notice EN+26
STN6N60M2 - ONSEMI BAS40LT1G

STN6N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.00 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN A SOT223-2 PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet ENProduct Change Notice EN+26

Technical Specifications

Parameters and characteristics for this part

SpecificationSTN6N60M2
Current - Continuous Drain (Id) @ 25°C5.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6.2 nC
Input Capacitance (Ciss) (Max) @ Vds220 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261-3
Power Dissipation (Max) [Max]6 W
Rds On (Max) @ Id, Vgs1.25 Ohm
Supplier Device PackageSOT-223-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 4000$ 0.21
DigikeyCut Tape (CT) 1$ 1.05
10$ 0.66
100$ 0.43
500$ 0.33
1000$ 0.30
2000$ 0.27
Digi-Reel® 1$ 1.05
10$ 0.66
100$ 0.43
500$ 0.33
1000$ 0.30
2000$ 0.27
Tape & Reel (TR) 4000$ 0.25
8000$ 0.23
12000$ 0.22
20000$ 0.21
NewarkEach (Supplied on Cut Tape) 1$ 1.13
10$ 0.76
25$ 0.69
50$ 0.62
100$ 0.55
250$ 0.50
500$ 0.45
1000$ 0.42

Description

General part information

STN6N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.