STN6N60M2

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STMicroelectronics

N-CHANNEL 600 V, 1.00 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN A SOT223-2 PACKAGE

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STN6N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 1.00 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN A SOT223-2 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STN6N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Technical Specifications

Parameters and characteristics for this part

Specification	STN6N60M2

Current - Continuous Drain (Id) (Tc)	5.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6.2 nC
Input Capacitance (Ciss) (Max)	220 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261-3
Package Name	SOT-223-2
Power Dissipation (Max)	6 W
Rds On (Max)	1.25 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4 V

STN6N60M2 Series

Part	Package / Case	Technology	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)
STMicroelectronics STN6N60M2	TO-261-3	MOSFET (Metal Oxide)	5.5 A	25 V	N-Channel	-55 °C	150 °C	1.25 Ohm	4 V	6 W	SOT-223-2	10 V	220 pF	6.2 nC	Surface Mount	600 V

Pricing

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CAD

3D models and CAD resources for this part