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DMN2004K-7 - SOT-23-3

DMN2004K-7

Active
Diodes Inc

MOSFET N-CH 20V 630MA SOT23-3

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DMN2004K-7 - SOT-23-3

DMN2004K-7

Active
Diodes Inc

MOSFET N-CH 20V 630MA SOT23-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2004K-7
Current - Continuous Drain (Id) @ 25°C630 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds150 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]350 mW
Rds On (Max) @ Id, Vgs [Max]550 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.26
100$ 0.13
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.37
10$ 0.26
100$ 0.13
500$ 0.12
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

DMN2004WKQ Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.