IXTM5N100A

Obsolete

IXYS

MOSFET N-CH 1000V 5A TO204AA

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Obsolete

IXYS

MOSFET N-CH 1000V 5A TO204AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXTM5N100A

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3, TO-204AA
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-204AA (IXTM)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
IXYS IXTM5N100	4.5 V	2.4 Ohm	5 A	1000 V	TO-204AA TO-3	20 V	MOSFET (Metal Oxide)	TO-204AA (IXTM)	180 W	Through Hole	10 V	130 nC	-55 °C	150 °C	N-Channel	2600 pF
IXYS IXTM5N100A	4.5 V		5 A	1000 V	TO-204AA TO-3	20 V	MOSFET (Metal Oxide)	TO-204AA (IXTM)	180 W	Through Hole	10 V	130 nC	-55 °C	150 °C	N-Channel	2600 pF	2 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 5A (Tc) 180W (Tc) Through Hole TO-204AA (IXTM)

Technical documentation and resources

No documents available