IPA95R1K2P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; TO-220 FULLPAK PACKAGE; 1200 MOHM; PRICE/PERFORMANCE

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IPA95R1K2P7XKSA1

Active

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; TO-220 FULLPAK PACKAGE; 1200 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA95R1K2P7XKSA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	478 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	27 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPA95R1 Series

Part	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs
Infineon Technologies IPA95R1K2P7XKSA1	3.5 V	20 V	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	6 A	TO-220-3 Full Pack	478 pF	10 V	PG-TO220-FP	950 V	27 W	Through Hole	1.2 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.29
		10	$ 1.47
		100	$ 1.00
		500	$ 0.80
		1000	$ 0.74
		2000	$ 0.68
		5000	$ 0.65
Newark	Each	1	$ 2.52
		10	$ 2.30
		100	$ 1.91
		500	$ 1.63
		1000	$ 1.41
		2500	$ 1.33
		10000	$ 1.30

Description

General part information

IPA95R1 Series

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.