IPP80R600P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-220 PACKAGE; 600 MOHM; PRICE/PERFORMANCE

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IPP80R600P7XKSA1

LTB

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-220 PACKAGE; 600 MOHM; PRICE/PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPP80R600P7XKSA1

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPP80R600 Series

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Infineon Technologies IPP80R600P7XKSA1	8 A	3.5 V	TO-220-3	800 V	MOSFET (Metal Oxide)	20 V	20 nC	600 mOhm	-55 °C	150 °C	570 pF	PG-TO220-3	Through Hole	60 W	10 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 0.88

Description

General part information

IPP80R600 Series

800V CoolMOS™ P7superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on)products. Overall, it helps customers save BOM cost and reduce assembly effort.

Documents

Technical documentation and resources

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