DMN3028LQ-7

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Diodes Inc

TRANS MOSFET N-CH 30V 6.2A 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

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Diodes Inc

TRANS MOSFET N-CH 30V 6.2A 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3028LQ-7

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	860 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Grade	FET Type
Diodes Inc DMN3028LQ-7	1.8 V	Surface Mount	680 pF	10.9 nC	20 V	MOSFET (Metal Oxide)	SOT-23-3	860 mW	10 V	2.5 V	-55 °C	150 °C	AEC-Q101	SC-59 SOT-23-3 TO-236-3	30 V	25 mOhm	6.2 A	Automotive	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.