DMP2100UFU-7

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Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2100UFU-7

Configuration	2 P-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	5.7 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	21.4 nC
Input Capacitance (Ciss) (Max) @ Vds	906 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	U-DFN2030-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Dual P-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Grade	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP2100UQ-7	SOT-23-3	20 V	Automotive	Surface Mount	SC-59 SOT-23-3 TO-236-3	216 pF	AEC-Q101	4.3 A	38 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	1.8 V 10 V	1.4 V	P-Channel	10 V	9.1 nC
Diodes Inc DMP2100UFU-7	U-DFN2030-6 (Type B)	20 V		Surface Mount	6-UFDFN Exposed Pad	906 pF		5.7 A	38 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)		1.4 V				2 P-Channel (Dual) Common Drain	900 mW	21.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.