IPB015N08N5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.5 MOHM;

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IPB015N08N5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.5 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB015N08N5ATMA1

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	222 nC
Input Capacitance (Ciss) (Max) @ Vds	16900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

IPB015 Series

Part	Supplier Device Package	FET Type	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type
Infineon Technologies IPB015N08N5ATMA1	PG-TO263-7	N-Channel	D2PAK TO-263-7	375 W	20 V	16900 pF	180 A	1.5 mOhm	222 nC	MOSFET (Metal Oxide)	3.8 V	6 V 10 V	-55 °C	175 ░C	80 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 8.12
		10	$ 5.54
		100	$ 4.07
		500	$ 3.61
	Digi-Reel®	1	$ 8.12
		10	$ 5.54
		100	$ 4.07
		500	$ 3.61
	Tape & Reel (TR)	1000	$ 3.61
Newark	Each (Supplied on Cut Tape)	1	$ 5.89
		10	$ 4.69
		25	$ 4.56
		50	$ 4.16
		100	$ 3.76
		250	$ 3.72
		500	$ 3.68
		1000	$ 3.67

Description

General part information

IPB015 Series

Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET IPB015N08N5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.

Documents

Technical documentation and resources