DXTP5840CFDB-7

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 4.8A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN, U-DFN2020-3, 3 PIN

Search across all available documentation for this part.

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 4.8A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN, U-DFN2020-3, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	DXTP5840CFDB-7

Current - Collector (Ic) (Max) [Max]	4.8 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	135 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-UDFN Exposed Pad
Power - Max [Max]	690 mW
Supplier Device Package	U-DFN2020-3 (Type B)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	370 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP, 40V, 4.8A, DFN2020-3

Part	Supplier Device Package	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Diodes Inc DXTP5840CFDB-7	U-DFN2020-3 (Type B)	Surface Mount	690 mW	-55 °C	150 °C	3-UDFN Exposed Pad	135 MHz	4.8 A	370 mV	250	PNP	100 nA	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

TN1.pdf

Technical documentation and resources