STF10NM65N

Obsolete

STMicroelectronics

MOSFET N-CH 650V 9A TO220FP

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 9A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF10NM65N

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STF10NM65N	25 V	Through Hole	850 pF	150 °C	MOSFET (Metal Oxide)	25 nC	TO-220-3 Full Pack	9 A	4 V	650 V	TO-220FP	10 V	480 mOhm	N-Channel	25 W
STMicroelectronics STF10NM50N	25 V	Through Hole	450 pF		MOSFET (Metal Oxide)		TO-220-3 Full Pack	7 A	4 V	500 V	TO-220FP	10 V	630 mOhm	N-Channel	25 W	17 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 9A (Tc) 25W (Tc) Through Hole TO-220FP

Technical documentation and resources