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STGB5H60DF - TO-263 D2PAK

STGB5H60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 5 A HIGH SPEED

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DocumentsAN4544+9
STGB5H60DF - TO-263 D2PAK

STGB5H60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 5 A HIGH SPEED

Deep-Dive with AI

DocumentsAN4544+9

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB5H60DF
Current - Collector Pulsed (Icm)20 A
Gate Charge43 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]88 W
Reverse Recovery Time (trr)134.5 ns
Supplier Device PackageTO-263 (D2PAK)
Switching Energy56 µJ, 78.5 µJ
Td (on/off) @ 25°C30 ns, 140 ns
Test Condition5 A, 47 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.86
10$ 1.18
100$ 0.80
500$ 0.63
Digi-Reel® 1$ 1.86
10$ 1.18
100$ 0.80
500$ 0.63
Tape & Reel (TR) 1000$ 0.58
2000$ 0.51
3000$ 0.50
5000$ 0.48
7000$ 0.47

Description

General part information

STGB5H60DF Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.