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STWA67N60DM6

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 58 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA67N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 58 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA67N60DM6
Current - Continuous Drain (Id) @ 25°C58 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]72.5 nC
Input Capacitance (Ciss) (Max) @ Vds3400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]431 W
Rds On (Max) @ Id, Vgs54 mOhm
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 600$ 5.87

Description

General part information

STWA67N60DM6 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

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