BCW67BE6327HTSA1

Obsolete

Infineon Technologies

TRANS PNP 32V 0.8A SOT23

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Obsolete

Infineon Technologies

TRANS PNP 32V 0.8A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCW67BE6327HTSA1

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature
Infineon Technologies BCW67BE6327HTSA1	700 mV	20 nA	32 V	PNP	PG-SOT23	330 mW	160	200 MHz	Surface Mount	800 mA	SC-59 SOT-23-3 TO-236-3	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 32 V 800 mA 200MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources

No documents available