IPAN60R210PFD7SXKSA1

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Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK NARROW LEAD PACKAGE; 210 MOHM; PRICE/PERFORMANCE

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IPAN60R210PFD7SXKSA1

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Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK NARROW LEAD PACKAGE; 210 MOHM; PRICE/PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPAN60R210PFD7SXKSA1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1015 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPAN60 Series

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPAN60R800CEXKSA1	8.4 A	TO-220-3 Full Pack	600 V	Through Hole	PG-TO220-FP	800 mOhm	20 V	10 V	3.5 V	373 pF	27 W	17.2 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel
Infineon Technologies IPAN60R360PFD7SXKSA1	10 A	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	360 mOhm	20 V	10 V	4.5 V	534 pF	23 W		MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel	12.7 nC
Infineon Technologies IPAN60R360P7SXKSA1	9 A	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220 Full Pack	360 mOhm	20 V	10 V	4 V	555 pF		13 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel		22 W
Infineon Technologies IPAN60R180P7SXKSA1	18 A	TO-220-3 Full Pack	600 V	Through Hole	PG-TO220-FP		20 V	10 V		1081 pF	26 W	25 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel			4 V
Infineon Technologies IPAN60R210PFD7SXKSA1	16 A	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	210 mOhm	20 V	10 V	4.5 V	1015 pF	25 W		MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel	23 nC
Infineon Technologies IPAN60R650CEXKSA1	9.9 A	TO-220-3 Full Pack	600 V	Through Hole	PG-TO220-FP	650 mOhm	20 V	10 V	3.5 V	440 pF		20.5 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel		28 W
Infineon Technologies IPAN60R600P7SXKSA1	6 A	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220 Full Pack	600 mOhm	20 V	10 V	4 V	363 pF	21 W	9 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.00
		10	$ 1.10
		50	$ 1.03
		100	$ 0.98
		200	$ 0.93
Digikey	Tube	1	$ 2.64
		10	$ 1.71
		100	$ 1.17
		500	$ 0.94
		1000	$ 0.87
		2000	$ 0.81
		5000	$ 0.79

Description

General part information

IPAN60 Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R210PFD7S) complements theCoolMOS™ 7 offering for consumer applications. The IPAN60R210PFD7S in a TO-220 FullPAK narrow-lead package features RDS(on)of 210mOhm resulting in low switching losses. The integrated fast body diode provides a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Documents

Technical documentation and resources