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DMN3061SWQ-13 - Package Image for SOT323

DMN3061SWQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetPackage PDF+2
DMN3061SWQ-13 - Package Image for SOT323

DMN3061SWQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheetPackage PDF+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3061SWQ-13
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)3.3 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]278 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)490 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs60 mOhm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.30
100$ 0.15
500$ 0.13
1000$ 0.09
2000$ 0.08
5000$ 0.07
Digi-Reel® 1$ 0.43
10$ 0.30
100$ 0.15
500$ 0.13
1000$ 0.09
2000$ 0.08
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
30000$ 0.06
50000$ 0.05

Description

General part information

DMN3061SWQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.