STW21N65M5

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STMicroelectronics

MOSFET N-CH 650V 17A TO247-3

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STMicroelectronics

MOSFET N-CH 650V 17A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW21N65M5

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 650V 17A TO247-3

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Technology
STMicroelectronics STW21N65M5	17 A	50 nC	TO-247-3	TO-247-3	1950 pF	N-Channel	5 V	190 mOhm	125 W	10 V	25 V	650 V	150 °C	Through Hole	MOSFET (Metal Oxide)

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General part information

N-Channel 650 V 17A (Tc) 125W (Tc) Through Hole TO-247-3

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