
CNY117-1X016
ActiveVishay General Semiconductor - Diodes Division
OPTOISO 5KV TRANS W/BASE 6DIP
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CNY117-1X016
ActiveVishay General Semiconductor - Diodes Division
OPTOISO 5KV TRANS W/BASE 6DIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | CNY117-1X016 | 
|---|---|
| Current - DC Forward (If) (Max) [Max] | 60 mA | 
| Current - Output / Channel | 50 mA | 
| Current Transfer Ratio (Max) | 80 % | 
| Current Transfer Ratio (Min) [Min] | 40 % | 
| Input Type | DC | 
| Mounting Type | Through Hole | 
| Number of Channels | 1 | 
| Operating Temperature [Max] | 110 °C | 
| Operating Temperature [Min] | -55 °C | 
| Package / Case | 6-DIP | 
| Package / Case | 10.16 mm | 
| Package / Case | 10.16 mm | 
| Rise / Fall Time (Typ) [custom] | 2 µs | 
| Rise / Fall Time (Typ) [custom] | 2 µs | 
| Supplier Device Package | 6-DIP | 
| Turn On / Turn Off Time (Typ) | 2.3 µs, 3 µs | 
| Vce Saturation (Max) [Max] | 400 mV | 
| Voltage - Forward (Vf) (Typ) | 1.39 V | 
| Voltage - Output (Max) [Max] | 70 V | 
CNY117 Series
| Part | Number of Channels | Mounting Type | Package / Case | Package / Case | Package / Case | Vce Saturation (Max) [Max] | Current Transfer Ratio (Min) [Min] | Voltage - Forward (Vf) (Typ) | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Output (Max) [Max] | Output Type | Current - DC Forward (If) (Max) [Max] | Current - Output / Channel | Turn On / Turn Off Time (Typ) | Input Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Current Transfer Ratio (Max) | Package / Case | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 10.16 mm  | 10.16 mm  | 400 mV  | 63 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 1.81 mOhm  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 125 %  | |
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 10.16 mm  | 10.16 mm  | 400 mV  | 63 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 1.81 mOhm  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 125 %  | |
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 10.16 mm  | 10.16 mm  | 400 mV  | 160 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 1.81 mOhm  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 320 %  | |
Vishay General Semiconductor - Diodes Division  | 1  | Surface Mount  | 6-SMD  Gull Wing  | 400 mV  | 160 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 1.81 mOhm  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-SMD  | 320 %  | |||
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 10.16 mm  | 10.16 mm  | 400 mV  | 63 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 125 %  | ||
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 7.62 mm  | 400 mV  | 40 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 1.81 mOhm  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 80 %  | 0.3 in  | |
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 7.62 mm  | 400 mV  | 100 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 200 %  | 0.3 in  | ||
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 7.62 mm  | 400 mV  | 40 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 80 %  | 0.3 in  | ||
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 7.62 mm  | 400 mV  | 63 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 125 %  | 0.3 in  | ||
Vishay General Semiconductor - Diodes Division  | 1  | Through Hole  | 6-DIP  | 10.16 mm  | 10.16 mm  | 400 mV  | 40 %  | 1.39 V  | 2 µs  | 2 µs  | 70 V  | 60 mA  | 50 mA  | 2.3 µs  3 µs  | DC  | -55 °C  | 110 °C  | 6-DIP  | 80 %  | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 2000 | $ 0.27 | |
Description
General part information
CNY117 Series
Optoisolator Transistor with Base Output 5000Vrms 1 Channel 6-DIP
Documents
Technical documentation and resources