Specification	SI1029X-T1-GE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	190 mA
Current - Continuous Drain (Id) (Typical)	305 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	750 nC
Input Capacitance (Ciss) (Max)	30 pF, 23 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power - Max	250 mW
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SI1029 Series

Part	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Rds On (Max)	Configuration	Input Capacitance (Ciss) (Max)	Power - Max	Package Name
Vishay Dale SI1029X-T1-E3	2.5 V	0.75 nC	Surface Mount	60 V	SOT-563 SOT-666	Logic Level Gate	-55 °C	150 °C	MOSFET (Metal Oxide)	190 mA	305 mA	1.4 Ohm	N P-Channel	30 pF	250 mW	SC-89 (SOT-563F)
Vishay Dale SI1029X-T1-GE3	2.5 V	750 nC	Surface Mount	60 V	SOT-563 SOT-666	Logic Level Gate	-55 °C	150 °C	MOSFET (Metal Oxide)	190 mA	305 mA	1.4 Ohm	N P-Channel	23 pF 30 pF	250 mW	SC-89 (SOT-563F)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources