IXTF1R4N450

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IXYS

MOSFET N-CH 4500V 1.4A I4PAC

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IXYS

MOSFET N-CH 4500V 1.4A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	IXTF1R4N450

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	4500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5 (3 Leads)
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	40 Ohm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
IXYS IXTF1R4N450	4500 V	MOSFET (Metal Oxide)	1.4 A	3300 pF	ISOPLUS i4-PAC™	20 V	88 nC	Through Hole	40 Ohm	i4-Pac™-5 (3 Leads)	-55 °C	150 °C	N-Channel	10 V	190 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 65.33

General part information

N-Channel 4500 V 1.4A (Tc) 190W (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available