AON7900

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A/13A 8DFN

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A/13A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON7900

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	13 A
Current - Continuous Drain (Id) @ 25°C [Min]	8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	1.8 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-DFN-EP
Supplier Device Package [x]	3.3
Supplier Device Package [y]	3.3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	FET Feature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Power - Max [Max]
Alpha & Omega Semiconductor Inc. AON7900	21 mOhm	Surface Mount	30 V	8-PowerWDFN	MOSFET (Metal Oxide)	8 A	13 A	Logic Level Gate	2.3 V	710 pF	11 nC	2 N-Channel (Dual)	-55 °C	150 °C	3.3	3.3	8-DFN-EP	1.8 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 8A, 13A 1.8W Surface Mount 8-DFN-EP (3.3x3.3)

Technical documentation and resources