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STB31N65M5 - D2Pak

STB31N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.124 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetUM1575+19
STB31N65M5 - D2Pak

STB31N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.124 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetUM1575+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB31N65M5
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1865 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs148 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.15
Digi-Reel® 1$ 4.15
Tape & Reel (TR) 1000$ 2.15
2000$ 2.02
5000$ 1.94

Description

General part information

STB31N65M5 Series

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.