IXTH14N100

Obsolete

IXYS

MOSFET N-CH 1000V 14A TO247

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Obsolete

IXYS

MOSFET N-CH 1000V 14A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH14N100

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds	5650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs [Max]	820 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
IXYS IXTH14N100	820 mOhm	10 V	N-Channel	MOSFET (Metal Oxide)	20 V	TO-247 (IXTH)	195 nC	5650 pF	1000 V	TO-247-3	4.5 V	360 W	14 A	-55 °C	150 °C	Through Hole
IXYS IXTH14N80		10 V	N-Channel	MOSFET (Metal Oxide)	20 V	TO-247 (IXTH)		4500 pF	800 V	TO-247-3	4.5 V		14 A	-55 °C	150 °C	Through Hole	170 nC	700 mOhm	300 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 14A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available