BFR93AWH6327XTSA1

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 12 V, 6 GHZ, 300 MW, 90 MA, SOT-323

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 12 V, 6 GHZ, 300 MW, 90 MA, SOT-323

Technical Specifications

Parameters and characteristics for this part

Specification	BFR93AWH6327XTSA1

Current - Collector (Ic) (Max) [Max]	90 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	6 GHz
Gain [Max]	15.5 dB
Gain [Min]	10.5 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	2.6 dB
Noise Figure (dB Typ @ f) [Min]	1.5 dB
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	300 mW
Supplier Device Package	PG-SOT323
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Supplier Device Package	Gain [Min]	Gain [Max]	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature
Infineon Technologies BFR93AWH6327XTSA1	PG-SOT323	10.5 dB	15.5 dB	SC-70 SOT-323	NPN	70	300 mW	1.5 dB	2.6 dB	6 GHz	12 V	Surface Mount	90 mA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323

Technical documentation and resources