IXTT16N10D2

Obsolete

IXYS

MOSFET N-CH 100V 16A TO268

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Obsolete

IXYS

MOSFET N-CH 100V 16A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT16N10D2

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	225 nC
Input Capacitance (Ciss) (Max) @ Vds	5700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Supplier Device Package	Rds On (Max) @ Id, Vgs
IXYS IXTT16N10D2	20 V	225 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	5700 pF	MOSFET (Metal Oxide)	Surface Mount	N-Channel	830 W	100 V	16 A	-55 °C	175 ░C	0 V	Depletion Mode	TO-268AA	64 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 16A (Tc) 830W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available