ZXTP2025FTA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5A I(C), 50V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN, SOT-23, 3 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5A I(C), 50V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN, SOT-23, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTP2025FTA

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	190 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	1.2 W
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PNP, 50V, 5A, SOT23

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	Transistor Type	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case
Diodes Inc ZXTP2025FTA	1.2 W	SOT-23-3	Surface Mount	PNP	190 MHz	-55 °C	150 °C	200 mV	50 V	5 A	200	20 nA	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 50V, 5A, SOT23

Technical documentation and resources