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STHU32N65DM6AG - HU3PAK

STHU32N65DM6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 83 MOHM TYP., 37 A MDMESH DM6 POWER MOSFET IN AN HU3PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+24
STHU32N65DM6AG - HU3PAK

STHU32N65DM6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 83 MOHM TYP., 37 A MDMESH DM6 POWER MOSFET IN AN HU3PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTHU32N65DM6AG
Current - Continuous Drain (Id) @ 25°C37 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2211 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]320 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]97 mOhm
Supplier Device PackageHU3PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.68
10$ 5.94
25$ 5.51
100$ 5.03
250$ 4.80
Digi-Reel® 1$ 7.68
10$ 5.94
25$ 5.51
100$ 5.03
250$ 4.80
Tape & Reel (TR) 600$ 4.63
1200$ 4.52
1800$ 4.47
NewarkEach (Supplied on Cut Tape) 1$ 7.68
10$ 5.94
25$ 5.51
50$ 5.27
100$ 5.03
250$ 4.80

Description

General part information

STHU32N65DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.