IXBA16N170AHV

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IXYS

HIGH VOLTAGE, HIGH GAIN BIMOSFET

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IXYS

HIGH VOLTAGE, HIGH GAIN BIMOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	IXBA16N170AHV

Current - Collector (Ic) (Max) [Max]	16 A
Current - Collector Pulsed (Icm)	40 A
Gate Charge	65 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	150 W
Reverse Recovery Time (trr)	25 ns
Supplier Device Package	TO-263HV
Td (on/off) @ 25°C	250 ns
Td (on/off) @ 25°C	15 ns
Test Condition	1360 V, 15 V, 10 Ohm, 10 A
Vce(on) (Max) @ Vge, Ic	6 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Package / Case	Gate Charge	Current - Collector Pulsed (Icm)	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition
IXYS IXBA16N170AHV	250 ns	15 ns	25 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	65 nC	40 A	150 W	6 V	Surface Mount	1700 V	TO-263HV	16 A	-55 °C	150 °C	10 Ohm 10 A 15 V 1360 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1700 V 16 A 150 W Surface Mount TO-263HV

Technical documentation and resources