IPI90R1K2C3XKSA2

Obsolete

Infineon Technologies

COOLMOS™ C3 SUPERJUNCTION MOSFET 900 V ; I2PAK TO-262 PACKAGE; 1200 MOHM; PRICE/PERFORMANCE

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IPI90R1K2C3XKSA2

Obsolete

Infineon Technologies

COOLMOS™ C3 SUPERJUNCTION MOSFET 900 V ; I2PAK TO-262 PACKAGE; 1200 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPI90R1K2C3XKSA2

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPI90R1 Series

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPI90R1K2C3XKSA2	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	83 W	900 V	20 V	710 pF	1.2 Ohm	Through Hole	5.1 A	3.5 V	28 nC	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPI90R1 Series

Replacement forCoolMOS™ C3isCoolMOS™ P7 900V CoolMOS™ C3is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.

Documents

Technical documentation and resources