Technical Specifications
Parameters and characteristics for this part
| Specification | STP3N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.64 | |
| 50 | $ 1.32 | |||
| 100 | $ 1.05 | |||
| 500 | $ 0.89 | |||
| 1000 | $ 0.72 | |||
| 2000 | $ 0.68 | |||
| 5000 | $ 0.65 | |||
| 10000 | $ 0.62 | |||
Description
General part information
STP3N80 Series
These devices are N-channel Power MOSFETs developed using SuperMESH 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.TO-220 worldwide best RDS(on)Worldwide best FOM (figure of merit)Ultra low gate charge100% avalanche testedZener-protected
Documents
Technical documentation and resources