Technical Specifications
Parameters and characteristics for this part
| Specification | STP7N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 271 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 950 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.02 | |
| 10 | $ 1.29 | |||
| 100 | $ 0.87 | |||
| 500 | $ 0.69 | |||
| 1000 | $ 0.64 | |||
| 2000 | $ 0.59 | |||
| 5000 | $ 0.53 | |||
| 10000 | $ 0.53 | |||
Description
General part information
STP7N60M2 Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources
Datasheet
DatasheetAN2842
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
TN1225
Technical Notes & ArticlesAN4250
Application Notes (5 of 9)DS9653
Product SpecificationsFlyers (5 of 10)
Flyers (5 of 10)
AN4406
Application Notes (5 of 9)AN5318
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
Flyers (5 of 10)
UM1575
User ManualsFlyers (5 of 10)
Flyers (5 of 10)
Flyers (5 of 10)
