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STP7N60M2 - TO-220-3

STP7N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.86 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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STP7N60M2 - TO-220-3

STP7N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.86 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP7N60M2
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]8.8 nC
Input Capacitance (Ciss) (Max) @ Vds271 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.02
10$ 1.29
100$ 0.87
500$ 0.69
1000$ 0.64
2000$ 0.59
5000$ 0.53
10000$ 0.53

Description

General part information

STP7N60M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.