ZVN4310GTA
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223
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ZVN4310GTA
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZVN4310GTA |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 540 mOhm |
| Supplier Device Package | SOT-223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.80 | |
| 10 | $ 1.25 | |||
| 100 | $ 0.74 | |||
| Tape & Reel (TR) | 1000 | $ 0.64 | ||
| 2000 | $ 0.62 | |||
| 3000 | $ 0.61 | |||
| 5000 | $ 0.60 | |||
Description
General part information
ZVN4310G Series
This MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources