IDC51D120T6MX1SA3

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Infineon Technologies

1200 V, 100 A, MEDIUM POWER, EMITTER CONTROLLED DIODE 4

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IDC51D120T6MX1SA3

Active

Infineon Technologies

1200 V, 100 A, MEDIUM POWER, EMITTER CONTROLLED DIODE 4

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDC51D120T6MX1SA3

Current - Average Rectified (Io)	100 A
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Sawn on foil
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.05 V

IDC51D120 Series

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Technology	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies IDC51D120T6MX1SA3	2.05 V	Standard Recovery >500ns	200 mA	Sawn on foil	100 A	Die	Standard	Surface Mount	-40 °C	175 ░C	1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IDC51D120 Series

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Documents

Technical documentation and resources