S6JR

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 6A DO4

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 6A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	S6JR

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP REV 600V 6A DO4

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Speed	Speed
GeneSiC Semiconductor S6JR	600 V	DO-203AA, DO-4, Stud	Reverse Polarity, Standard	10 µA	1.1 V	6 A	175 ░C	-65 C	DO-4	Chassis, Stud Mount	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1500	$ 3.22

General part information

Diode 600 V 6A Chassis, Stud Mount DO-4

Technical documentation and resources